PULSED LASER-INDUCED AMORPHIZATION OF POLYCRYSTALLINE SILICON FILM

被引：15

作者：

SAMESHIMA, T

HARA, M

USUI, S

机构：

[1] Sony Research Center, Hodogaya-ku, Yokohama

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1990年 / 29卷 / 04期

关键词：

Laser-induced amorphization; Laser-induced crystallization;

D O I：

10.1143/JJAP.29.L548

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A 20 nm-thick polycrystalline silicon film was completely amorphized through laser-induced melt-regrowth using a 30 ns XeCl excimer laser pulse at an energy density of over 240 mJ/cm2. Moreover, the amorphized silicon was recrystallized by irradiation by a single pulse at an energy density below 240 mJ/cm2. The transition from the amorphous to the crystalline state was reversible and governed by the laser energy density. The laser-induced amorphized film had a low optical band gap of 1.4 eV. Its electrical conductivity was characterized by variable-range hopping. © 1990 IOP Publishing Ltd.

引用

收藏

页码：L548 / L551

页数：4

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