DETERMINATION OF THE ELECTRONIC DENSITY OF STATES IN HYDROGENATED AMORPHOUS-SILICON (A-SIH) FROM SCHOTTKY DIODE CAPACITANCE-VOLTAGE AND CONDUCTANCE-VOLTAGE MEASUREMENTS

被引：48

作者：

VIKTOROVITCH, P

JOUSSE, D

机构：

来源：

关键词：

D O I：

10.1016/0022-3093(80)90655-9

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：569 / 574

页数：6

共 9 条

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[8] SCHOTTKY-BARRIER AND MIS TUNNEL-DIODES ON HYDROGENATED AMORPHOUS SILICON OF PHOTO-VOLTAIC QUALITY PREPARED BY CATHODE SPUTTERING - ELECTRIC PROPERTIES DETERMINED BY CAPACITANCE MEASUREMENTS
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