EFFECT OF GOLD ON PROPERTIES OF SI-SIO2 SYSTEM

[1] ADAMIC JW, 1963, SEP NEW YORK M EL SO

[2] EFFECT OF SURFACE STATES ON ELECTRON MOBILITY IN SILICON SURFACE-INVERSION LAYERS [J]. APPLIED PHYSICS LETTERS, 1966, 9 (09) : 344 - &

[3] ATALLA MM, 1960, PROPERTIES ELEMENTAL, P163

[4] PROPERTIES OF GOLD DOPED MOS STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (11) : 1165 - +

[5] CAGNINA SF, 1967, OCT EL SOC M CHIC

[6] CHOU N, 1967, OCT EL SOC M CHIC

[7] GOLD DIFFUSIVITIES IN SIO2 AND SI USING MOS STRUCTURE - (800 TO 1200 DEGREES C - IMPURITY EFFECTS - BULK VS SURFACE DIFFUSION - E/T) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (12) : 323 - &

[8] COLLINS DR, 1967, OCT EL SOC M CHIC

[9] COLLINS DR, 1966, 1966 IEEE SOL DEV RE

[10] COLLINS DR, UNPUBLISHED

[1] ADAMIC JW, 1963, SEP NEW YORK M EL SO

[2] EFFECT OF SURFACE STATES ON ELECTRON MOBILITY IN SILICON SURFACE-INVERSION LAYERS [J]. APPLIED PHYSICS LETTERS, 1966, 9 (09) : 344 - &

[3] ATALLA MM, 1960, PROPERTIES ELEMENTAL, P163

[4] PROPERTIES OF GOLD DOPED MOS STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (11) : 1165 - +

[5] CAGNINA SF, 1967, OCT EL SOC M CHIC

[6] CHOU N, 1967, OCT EL SOC M CHIC

[7] GOLD DIFFUSIVITIES IN SIO2 AND SI USING MOS STRUCTURE - (800 TO 1200 DEGREES C - IMPURITY EFFECTS - BULK VS SURFACE DIFFUSION - E/T) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (12) : 323 - &

[8] COLLINS DR, 1967, OCT EL SOC M CHIC

[9] COLLINS DR, 1966, 1966 IEEE SOL DEV RE

[10] COLLINS DR, UNPUBLISHED