ANALYSIS OF CURRENT LEAKAGE IN INGAASP INP BURIED HETEROSTRUCTURE LASERS

被引：29

作者：

OHTOSHI, T

YAMAGUCHI, K

CHINONE, N

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1989年 / 25卷 / 06期

关键词：

D O I：

10.1109/3.29270

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1369 / 1375

页数：7

共 35 条

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[7] ANALYSIS OF LEAKAGE CURRENTS IN 1.3-MU-M INGAASP REAL-INDEX-GUIDED LASERS [J].

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[8]

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[10] AUGER RECOMBINATION IN DIRECT-GAP SEMICONDUCTORS - BAND-STRUCTURE EFFECTS [J].

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