BUFFERED DIRECT INJECTION OF PHOTOCURRENTS INTO CHARGE-COUPLED-DEVICES

[1] BARBE DF, 1976, P IEEE, V63, P52

[2] LOW-LEVEL CURRENTS IN INSULATED GATE FIELD-EFFECT TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1972, 15 (03) : 293 - +

[3] BLUZER N, 1977, ELECTRON DEVICES, V24, P1201

[4] FRENCH DE, 1974, MAY P IRIS DAYT

[5] HANSELL GL, 1977, ELECTRON DEVICES, V24, P1202

[6] HESS MR, 1974, P IRIS, V22

[7] LIN HC, 1970, J SOLID STATE CIRCUI, V5

[8] Lloyd J., 1975, THERMAL IMAGING SYST

[9] MODULATION OF SPACE-CHARGE-LIMITED CURRENT FLOW IN INSULATED-GATE FIELD-EFFECT TETRODES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (09) : 759 - +

[10] HIGH DETECTIVITY PBXSN1-XTE PHOTOVOLTAIC DIODES [J]. INFRARED PHYSICS, 1973, 13 (02): : 143 - 147

[1] BARBE DF, 1976, P IEEE, V63, P52

[2] LOW-LEVEL CURRENTS IN INSULATED GATE FIELD-EFFECT TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1972, 15 (03) : 293 - +

[3] BLUZER N, 1977, ELECTRON DEVICES, V24, P1201

[4] FRENCH DE, 1974, MAY P IRIS DAYT

[5] HANSELL GL, 1977, ELECTRON DEVICES, V24, P1202

[6] HESS MR, 1974, P IRIS, V22

[7] LIN HC, 1970, J SOLID STATE CIRCUI, V5

[8] Lloyd J., 1975, THERMAL IMAGING SYST

[9] MODULATION OF SPACE-CHARGE-LIMITED CURRENT FLOW IN INSULATED-GATE FIELD-EFFECT TETRODES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (09) : 759 - +

[10] HIGH DETECTIVITY PBXSN1-XTE PHOTOVOLTAIC DIODES [J]. INFRARED PHYSICS, 1973, 13 (02): : 143 - 147