H3PO4 - ETCHING OF (001)-FACES OF INP, (GAIN)P, GAP, AND GA(ASP)

被引：14

作者：

GOTTSCHALCH, V

HEINIG, W

BUTTER, E

ROSIN, H

FREYDANK, G

机构：

[1] Kombinat Halbleiterwerk, Frankfurt/Oder, DDR‐1533, Stahnsdorf Ruhlsdorfer Weg

来源：

KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY | 1979年 / 14卷 / 05期

关键词：

D O I：

10.1002/crat.19790140509

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This paper shows that hot H3PO4 is a suitable etchant for the production of dislocation etch pits on {001}‐InP, (InGa)P, GaP, Ga(AsP), and {111}‐GaP. The effects upon etch pit morphology of the misorientation of samples and the type of dislocations are investigated in detail. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim

引用

收藏

页码：563 / 569

页数：7

相关论文

共 12 条

[1] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS [J].

ABRAHAMS, MS ;

BUIOCCHI, CJ .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) :2855-&

[2] Etch Pits in Flux-Grown Corundum [J].

Champion, J. A. ;

Clemence, M. A. .

JOURNAL OF MATERIALS SCIENCE, 1967, 2 (02) :153-159

[3]

GOTTSCHALCH V, 1972, KRISTALL TECHNIK, V7, P1007

[4] ETCHING STUDIES OF IMPURITY PRECIPITATES IN PULLED GAP CRYSTALS [J].

IIZUKA, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (07) :1190-&

[5] STRUCTURAL ETCHING OF GAP AND (GA,IN)P [J].

ROSIN, H ;

FREYDANK, G .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 32 (01) :133-138

[6] METHOD AND RESULTS OF A DISLOCATION-STRUCTURE ANALYSIS OF GA(AS,P) BY ETCHING [J].

ROSIN, H .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 29 (01) :K5-&

[7] REVEAL OF DISLOCATION ETCH PITS ON (001) GAP WITH HOT PHOSPHORIC-ACID [J].

ROSIN, H ;

FREYDANK, G ;

KLEIN, R ;

BRUCHHOLZ, M ;

GOTTSCHALCH, V .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 44 (01) :K13-&

[8]

SHINTANI A, 1976, J ELECTROCHEM SOC, P123

[9]

SHINTANI A, 1976, J ELECTROCHEM SOC, P706

[10] VARIOUS DISLOCATION ETCH PITS REVEALED ON LPE GAAS[001] LAYER BY MOLTEN KOH [J].

TAKENAKA, T ;

HAYASHI, H ;

MURATA, K ;

INOGUCHI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (06) :1145-1146