VARIOUS DISLOCATION ETCH PITS REVEALED ON LPE GAAS[001] LAYER BY MOLTEN KOH

被引：16

作者：

TAKENAKA, T

HAYASHI, H

MURATA, K

INOGUCHI, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1978年 / 17卷 / 06期

关键词：

D O I：

10.1143/JJAP.17.1145

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1145 / 1146

页数：2

共 8 条

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BUIOCCHI, CJ .

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[2] DISLOCATION ETCH PITS IN SINGLE CRYSTAL GAAS [J].

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WATSON, CB .

PHYSICA STATUS SOLIDI, 1969, 32 (01) :K13-+

[3] DISLOCATION MULTIPLICATION IN LITHIUM FLUORIDE CRYSTALS [J].

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GILMAN, JJ .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (04) :632-643

[4] DISLOCATION VELOCITIES, DISLOCATION DENSITIES, AND PLASTIC FLOW IN LITHIUM FLUORIDE CRYSTALS [J].

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GILMAN, JJ .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (02) :129-144

[5]

MARUYAMA M, 1969, OYO BUTURI, V38, P958

[6] ETCH PITS IN GALLIUM ARSENIDE [J].

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CROCKER, AJ .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (03) :611-612

[7]

SCHELL HA, 1957, Z METALLKD, V48, P158

[8] ETCH PIT STUDY OF GAAS[001] LPE LAYER BY MOLTEN KOH [J].

TAKENAKA, T ;

HAYASHI, H ;

YAMAMOTO, S ;

MURATA, K ;

INOGUCHI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (02) :447-448

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