ETCH PIT STUDY OF GAAS[001] LPE LAYER BY MOLTEN KOH

被引：7

作者：

TAKENAKA, T

HAYASHI, H

YAMAMOTO, S

MURATA, K

INOGUCHI, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1978年 / 17卷 / 02期

关键词：

D O I：

10.1143/JJAP.17.447

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：447 / 448

页数：2

共 8 条

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ABRAHAMS, MS ;

BUIOCCHI, CJ .

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[2] DISLOCATION ETCH PITS IN SINGLE CRYSTAL GAAS [J].

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WATSON, CB .

PHYSICA STATUS SOLIDI, 1969, 32 (01) :K13-+

[3] ETCH PIT OBSERVATION OF VERY THIN [001]-GAAS LAYER BY MOLTEN KOH [J].

ISHII, M ;

HIRANO, R ;

KAN, H ;

ITO, A .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (04) :645-650

[4] INFLUENCE OF OXYGEN IN AMBIENT GAS ON LPE GAAS LAYERS [J].

KAN, H ;

ISHII, M ;

SUSAKI, W .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 :461-464

[5] ETCH PITS IN GALLIUM ARSENIDE [J].

RICHARDS, JL ;

CROCKER, AJ .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (03) :611-612

[6] ETCH PIT STUDIES OF GAP LIQUID-PHASE EPITAXIAL LAYERS [J].

ROZGONYI, GA ;

LIZUKA, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (05) :673-678

[7]

SATO Y, 1971, OYO BUTSURI, V40, P437

[8]

SCHELL HA, 1957, Z METALLKD, V48, P158

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