INFLUENCE OF OXYGEN IN AMBIENT GAS ON LPE GAAS LAYERS

被引：4

作者：

KAN, H ^{[1
]}

ISHII, M ^{[1
]}

SUSAKI, W ^{[1
]}

机构：

[1] MITSUBISHI ELECT CORP,CENT RES LAB,ITAMI,HYOGO 664,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1977年 / 16卷

关键词：

D O I：

10.7567/JJAPS.16S1.461

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：461 / 464

页数：4

共 8 条

[1]

GRAMAIER JG, 1969, PHYS STATUS SOLIDI, V32, pK13

[2]

IKEDA K, 1974, 5TH P INT S GALL ARS, P174

[3] ETCH PIT OBSERVATION OF VERY THIN [001]-GAAS LAYER BY MOLTEN KOH [J].

ISHII, M ;

HIRANO, R ;

KAN, H ;

ITO, A .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (04) :645-650

[4]

KAN H, 1975, APPL PHYS LETT, V27, P139

[5] INFLUENCE OF OXYGEN ON PROPERTIES OF GAAS GROWN BY LIQUID-PHASE EPITAXY [J].

OTSUBO, M ;

SEGAWA, K ;

MIKI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (06) :797-803

[6] DEFECT STRUCTURE INTRODUCED DURING OPERATION OF HETEROJUNCTION GAAS LASERS [J].

PETROFF, P ;

HARTMAN, RL .

APPLIED PHYSICS LETTERS, 1973, 23 (08) :469-471

[7]

SOLOMON R, 1969, 2ND P INT S GALL ARS, P11

[8] DEGRADATION MECHANISM OF (AL.GA) AS DOUBLE-HETEROSTRUCTURE LASER-DIODES [J].

YONEZU, H ;

SAKUMA, I ;

KAMEJIMA, T ;

UENO, M ;

NISHIDA, K ;

NANNICHI, Y ;

HAYASHI, I .

APPLIED PHYSICS LETTERS, 1974, 24 (01) :18-19

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