OPTICAL METHOD FOR DETERMINING CARRIER LIFETIMES IN SEMICONDUCTORS

被引:5
作者
HULDT, L
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D O I
10.1103/PhysRevLett.2.3
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O4 [物理学];
学科分类号
0702 ;
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页码:3 / 5
页数:3
相关论文
共 6 条
[1]   LIFETIME MEASUREMENTS OF EXCESS CARRIERS IN SEMICONDUCTORS [J].
HARRICK, NJ .
JOURNAL OF APPLIED PHYSICS, 1956, 27 (12) :1439-1442
[2]   INFRARED ABSORPTION OF PHOTO GENERATED FREE CARRIERS IN GERMANIUM [J].
HULDT, L ;
STAFLIN, T .
PHYSICAL REVIEW LETTERS, 1958, 1 (07) :236-237
[3]   VALENCE BAND STRUCTURE OF SILICON [J].
HULDT, L ;
STAFLIN, T .
PHYSICAL REVIEW LETTERS, 1958, 1 (09) :313-315
[4]   DIFFUSION OF MINORITY CARRIERS IN THE PRESENCE OF TRAPPING [J].
JONSCHER, AK .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1957, 70 (02) :230-234
[5]  
KESSLER FR, 1958, Z NATURFORSCH PT A, V13, P295
[6]   DRIFT MOBILITIES IN SEMICONDUCTORS .1. GERMANIUM [J].
PRINCE, MB .
PHYSICAL REVIEW, 1953, 92 (03) :681-687