VALENCE BAND STRUCTURE OF SILICON

[1] NEW INFRARED ABSORPTION BANDS IN P-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1952, 87 (06): : 1130 - 1131

[2] ABSORPTION OF INFRARED LIGHT BY FREE CARRIERS IN GERMANIUM [J]. PHYSICAL REVIEW, 1953, 91 (06): : 1342 - 1346

[3] BURSTEIN, 1956, 1954 P C PHOT ATL CI, P353

[4] DEXTER, 1956, PHYS REV, V104, P637

[5] DRESSELHAUS, 1955, PHYS REV, V98, P368

[6] FAN, 1956, 1954 P C PHOT ATL CI, P184

[7] INFRA-RED ABSORPTION IN SEMICONDUCTORS [J]. REPORTS ON PROGRESS IN PHYSICS, 1956, 19 : 107 - 155

[8] THE ELECTRONIC ENERGY BAND STRUCTURE OF SILICON AND GERMANIUM [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1955, 43 (12): : 1703 - 1732

[9] SOME RECENT DEVELOPMENTS IN THE CALCULATION OF CRYSTAL ENERGY BANDS - NEW RESULTS FOR THE GERMANIUM CRYSTAL [J]. PHYSICA, 1954, 20 (10): : 801 - 812

[10] INFRARED ABSORPTION OF PHOTO GENERATED FREE CARRIERS IN GERMANIUM [J]. PHYSICAL REVIEW LETTERS, 1958, 1 (07) : 236 - 237

[1] NEW INFRARED ABSORPTION BANDS IN P-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1952, 87 (06): : 1130 - 1131

[2] ABSORPTION OF INFRARED LIGHT BY FREE CARRIERS IN GERMANIUM [J]. PHYSICAL REVIEW, 1953, 91 (06): : 1342 - 1346

[3] BURSTEIN, 1956, 1954 P C PHOT ATL CI, P353

[4] DEXTER, 1956, PHYS REV, V104, P637

[5] DRESSELHAUS, 1955, PHYS REV, V98, P368

[6] FAN, 1956, 1954 P C PHOT ATL CI, P184

[7] INFRA-RED ABSORPTION IN SEMICONDUCTORS [J]. REPORTS ON PROGRESS IN PHYSICS, 1956, 19 : 107 - 155

[8] THE ELECTRONIC ENERGY BAND STRUCTURE OF SILICON AND GERMANIUM [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1955, 43 (12): : 1703 - 1732

[9] SOME RECENT DEVELOPMENTS IN THE CALCULATION OF CRYSTAL ENERGY BANDS - NEW RESULTS FOR THE GERMANIUM CRYSTAL [J]. PHYSICA, 1954, 20 (10): : 801 - 812

[10] INFRARED ABSORPTION OF PHOTO GENERATED FREE CARRIERS IN GERMANIUM [J]. PHYSICAL REVIEW LETTERS, 1958, 1 (07) : 236 - 237