ELECTRON-SCATTERING BY LOCALIZED IMPURITY POTENTIALS IN COMPENSATED GAAS

被引：13

作者：

CHATTOPADHYAY, D

机构：

来源：

PHYSICAL REVIEW B | 1981年 / 23卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.23.2956

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2956 / 2959

页数：4

共 17 条

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