TEMPERATURE-DEPENDENCE OF THE ELECTRON-MOBILITY IN GAAS

被引：3

作者：

JERVIS, TR

机构：

[1] Department of Physics, University of Nevada, Las Vegas

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 53卷 / 02期

关键词：

D O I：

10.1002/pssa.2210530257

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：K199 / K202

页数：4

共 11 条

[1] SCATTERING FACTOR FOR GEOMETRICAL MAGNETORESISTANCE IN GAAS
BLOOD, P
TREE, RJ
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (09) : L29 - &
[2] MONTE CARLO DETERMINATION OF HOT ELECTRON GALVANOMAGNETIC EFFECTS IN GALLIUM ARSENIDE
BOARDMAN, AD
FAWCETT, W
RUCH, JG
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 4 (01): : 133 - &
[3] CALCULATION OF VELOCITY-FIELD CHARACTERISTIC FOR GALLIUM ARSENIDE
BUTCHER, PN
FAWCETT, W
[J]. PHYSICS LETTERS, 1966, 21 (05): : 489 - &
[4] HIGH-FIELD TRANSPORT IN N-TYPE GAAS
CONWELL, EM
VASSELL, MO
[J]. PHYSICAL REVIEW, 1968, 166 (03): : 797 - +
[5] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS
EHRENREICH, H
[J]. PHYSICAL REVIEW, 1960, 120 (06): : 1951 - 1963
[6] MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE
FAWCETT, W
BOARDMAN, AD
SWAIN, S
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) : 1963 - &
[7] GEOMETRICAL MAGNETORESISTANCE AND HALL MOBILITY IN GUNN EFFECT DEVICES
JERVIS, TR
JOHNSON, EF
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (02) : 181 - &
[8] INVESTIGATIONS OF CONTACT RESISTANCE AND CARRIER MOBILITY IN EPITAXIAL N+-N STRUCTURES
MOROZOV, BV
SKOK, EM
VELICHKO, AA
IVANOV, EV
GUTAI, L
MOJZES, I
[J]. THIN SOLID FILMS, 1976, 36 (02) : 419 - 422
[9] MEASUREMENT OF VELOCITY-FIELD CHARACTERISTIC OF GALLIUM ARSENIDE
RUCH, JG
KINO, GS
[J]. APPLIED PHYSICS LETTERS, 1967, 10 (02) : 40 - &
[10] TEMPERATURE DEPENDENCE OF TRANSPORT PROPERTIES OF GALLIUM ARSENIDE DETERMINED BY A MONTE-CARLO METHOD
RUCH, JG
FAWCETT, W
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) : 3843 - &

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