ROLE OF HYDROGEN IN THE FORMATION AND STRUCTURE OF THE SI-NL10 THERMAL DONOR

被引:48
作者
MARTYNOV, YV
GREGORKIEWICZ, T
AMMERLAAN, CAJ
机构
[1] Van der Waals-Zeeman Laboratorium, Universiteit Van Amsterdam, NL-1018 XE Amsterdam
关键词
D O I
10.1103/PhysRevLett.74.2030
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Microscopic evidence of a prominent role of hydrogen in the formation and structure of the Si- NL10 thermal donor is presented. Hyperfine interactions with the H1 nucleus have been detected and analyzed by means of electron-nuclear double resonance (ENDOR) and field-scanned ENDOR. Based on the current results an identification of the Si- NL10 center as a singly passivated state of the thermal donor in its neutral charge state is proposed. © 1995 The American Physical Society.
引用
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页码:2030 / 2033
页数:4
相关论文
共 25 条
[1]   SI-NL10 - PARAMAGNETIC ACCEPTOR STATE OF THE SILICON THERMAL DONOR [J].
BEKMAN, HHPT ;
GREGORKIEWICZ, T ;
AMMERLAAN, CAJ .
PHYSICAL REVIEW LETTERS, 1988, 61 (02) :227-230
[2]   ENHANCED THERMAL DONOR FORMATION IN SILICON EXPOSED TO A HYDROGEN PLASMA [J].
BROWN, AR ;
CLAYBOURN, M ;
MURRAY, R ;
NANDHRA, PS ;
NEWMAN, RC ;
TUCKER, JH .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (06) :591-593
[3]  
DEAK P, 1992, PHYS REV B, V46, P11612
[4]  
FULLER CS, 1954, PHYS REV, V96, P833
[5]   EFFECT OF HEAT TREATMENT UPON THE ELECTRICAL PROPERTIES OF SILICON CRYSTALS [J].
FULLER, CS ;
LOGAN, RA .
JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) :1427-1436
[6]   OBSERVATION OF 5 ADDITIONAL THERMAL DONOR SPECIES TD12 TO TD16 AND OF REGROWTH OF THERMAL DONORS AT INITIAL-STAGES OF THE NEW OXYGEN DONOR FORMATION IN CZOCHRALSKI-GROWN SILICON [J].
GOTZ, W ;
PENSL, G ;
ZULEHNER, W .
PHYSICAL REVIEW B, 1992, 46 (07) :4312-4315
[7]   OXYGEN INCORPORATION IN THERMAL-DONOR CENTERS IN SILICON [J].
GREGORKIEWICZ, T ;
VANWEZEP, DA ;
BEKMAN, HHPT ;
AMMERLAAN, CAJ .
PHYSICAL REVIEW LETTERS, 1987, 59 (15) :1702-1705
[8]   COMPARATIVE-STUDY OF SI-NL8 AND SI-NL10 THERMAL-DONOR-RELATED EPR CENTERS [J].
GREGORKIEWICZ, T ;
BEKMAN, HHPT ;
AMMERLAAN, CAJ .
PHYSICAL REVIEW B, 1990, 41 (18) :12628-12637
[9]   MICROSCOPIC STRUCTURE OF THE NL10 HEAT-TREATMENT CENTER IN SILICON - STUDY BY ELECTRON-NUCLEAR DOUBLE-RESONANCE [J].
GREGORKIEWICZ, T ;
BEKMAN, HHPT ;
AMMERLAAN, CAJ .
PHYSICAL REVIEW B, 1988, 38 (06) :3998-4015
[10]   ELECTRON-PARAMAGNETIC-RES STUDIES OF HEAT-TREATMENT CENTERS IN P-TYPE SILICON [J].
GREGORKIEWICZ, T ;
VANWEZEP, DA ;
BEKMAN, HHPT ;
AMMERLAAN, CAJ .
PHYSICAL REVIEW B, 1987, 35 (08) :3810-3817