A NEW ENERGY-MODEL FOR THE CALCULATION OF THE SURFACE RECONSTRUCTION OF III-V SEMICONDUCTORS - APPLICATION TO THE GAAS(110) SURFACE

被引：5

作者：

TOET, SE

LENSTRA, D

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1987年 / 43卷 / 02期

关键词：

D O I：

10.1007/BF00617957

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：85 / 89

页数：5

共 19 条

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