IRON AS A THERMAL DEFECT IN SILICON

被引：62

作者：

WEBER, E ^{[1
]}

RIOTTE, HG ^{[1
]}

机构：

[1] UNIV COLOGNE,INST KERNCHEM,D-5000 COLOGNE 41,FED REP GER

来源：

关键词：

D O I：

10.1063/1.90412

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：433 / 435

页数：3

共 8 条

[1]

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CARLSON, RO .

PHYSICAL REVIEW, 1957, 108 (06) :1409-1414

[3]

LEE YH, 1977, APPL PHYS LETT, V31, P142, DOI 10.1063/1.89630

[4] THERMALLY INDUCED DEFECTS IN N-TYPE AND P-TYPE SILICON [J].

LESKOSCHEK, W ;

FEICHTINGER, H ;

VIDRICH, G .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1973, 20 (02) :601-610

[5]

LUDWIG GW, 1962, SOLID STATE PHYS, V13, P223

[6] VACANCIES AND INTERSTITIALS IN GERMANIUM AND SILICON [J].

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ACTA METALLURGICA, 1956, 4 (01) :52-57

[7]

RIOTTE HG, 1977, RADIOCHEM RADIOA LET, V30, P311

[8] DEFECTS IN QUENCHED SILICON [J].

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PHYSICA STATUS SOLIDI, 1969, 33 (02) :721-&