THE ACCUMULATION-MODE FIELD-EFFECT TRANSISTOR - A NEW ULTRALOW ON-RESISTANCE MOSFET

被引：22

作者：

BALIGA, BJ

SYAU, TY

VENKATRAMAN, P

机构：

[1] Electrical and Computer Engineering Department, North Carolina State University, Raleigh

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 08期

关键词：

D O I：

10.1109/55.192780

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An ultralow specific on-resistance, vertical channel, power MOSFET structure, based upon current conduction via an accumulation layer formed on the surface of a trench (UMOS) gate structure, is described. Two-dimensional numerical simulations and experimental results have been obtained demonstrating that a specific on-resistance approaching 100-mu-OMEGA . cm2 can be obtained for a silicon device capable of blocking 25 V.

引用

页码：427 / 429

页数：3

共 10 条

[1]

BALIGA BJ, 1990, P INT C SOLID STATE, P5

[2]

BALIGA BJ, 1987, MODERN POWER DEVICES

[3] TRENCH DMOS TRANSISTOR TECHNOLOGY FOR HIGH-CURRENT (100 A RANGE) SWITCHING [J].