TRENCH DMOS TRANSISTOR TECHNOLOGY FOR HIGH-CURRENT (100 A RANGE) SWITCHING

被引：30

作者：

BULUCEA, C

ROSSEN, R

机构：

[1] Siliconix Incorporated, Santa Clara, CA 95054

来源：

SOLID-STATE ELECTRONICS | 1991年 / 34卷 / 05期

关键词：

D O I：

10.1016/0038-1101(91)90153-P

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Design and processing concepts are presented that have led to the development of rugged high-current (100 A range) low-voltage trench DMOS transistors, featuring 4 m-OMEGA on-resistance, with controlled bulk avalanche breakdown at 70 V and gate dielectric breakdown at 60 V. The results of a simulation-based investigation are also presented, revealing that the trench DMOS technology has at least a factor-of-two die area advantage over its planar DMOS counterpart in the range from low (50 V) to medium (200 V) voltages.

引用

页码：493 / 507

页数：15

共 23 条

[1] SWITCHING SPEED ENHANCEMENT IN INSULATED GATE TRANSISTORS BY ELECTRON-IRRADIATION [J].