NUMERICAL AND EXPERIMENTAL COMPARISON OF 60-V VERTICAL DOUBLE-DIFFUSED MOSFETS AND MOSFETS WITH A TRENCH-GATE STRUCTURE

被引：5

作者：

CHANG, HR

机构：

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 03期

关键词：

D O I：

10.1016/0038-1101(89)90099-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：247 / 251

页数：5

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