THEORETICAL BASIS FOR FIELD CALCULATIONS ON MULTIDIMENSIONAL REVERSE BIASED SEMICONDUCTOR-DEVICES

被引:26
作者
ADLER, MS
TEMPLE, VAK
RUSTAY, RC
机构
关键词
D O I
10.1016/0038-1101(82)90077-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1179 / 1186
页数:8
相关论文
共 18 条
[1]   A SIMPLE METHOD FOR PREDICTING THE FORWARD BLOCKING GAIN OF GRIDDED FIELD-EFFECT DEVICES WITH RECTANGULAR GRIDS [J].
ADLER, MS ;
BALIGA, BJ .
SOLID-STATE ELECTRONICS, 1980, 23 (07) :735-740
[2]   GENERAL METHOD FOR PREDICTING AVALANCHE BREAKDOWN VOLTAGE OF NEGATIVE BEVELLED DEVICES [J].
ADLER, MS ;
TEMPLE, VAK .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (08) :956-960
[3]   THEORY AND BREAKDOWN VOLTAGE FOR PLANAR DEVICES WITH A SINGLE FIELD LIMITING RING [J].
ADLER, MS ;
TEMPLE, VAK ;
FERRO, AP ;
RUSTAY, RC .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (02) :107-113
[4]   MAXIMUM SURFACE AND BULK ELECTRIC-FIELDS AT BREAKDOWN FOR PLANAR AND BEVELED DEVICES [J].
ADLER, MS ;
TEMPLE, VAK .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) :1266-1270
[5]   INFLUENCE OF BEVEL ANGLE AND SURFACE CHARGE ON BREAKDOWN VOLTAGE OF NEGATIVELY BEVELED DIFFUSED P-N-JUNCTIONS [J].
BAKOWSKI, M ;
HANSSON, B .
SOLID-STATE ELECTRONICS, 1975, 18 (7-8) :651-&
[6]  
BAKOWSKI M, 1973, IEEE T ELECT DEV, V20
[7]   FIELD DISTRIBUTION NEAR-SURFACE OF BEVELED P-N-JUNCTIONS IN HIGH-VOLTAGE DEVICES [J].
CORNU, J .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (04) :347-352
[8]   CONTROL OF ELECTRIC FIELD AT SURFACE OF P-N JUNCTIONS [J].
DAVIES, RL ;
GENTRY, FE .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) :313-+
[9]  
GRAY PE, 1969, SEEC SERIES, V2, P429
[10]   NONPLANAR VLSI DEVICE ANALYSIS USING THE SOLUTION OF POISSON EQUATION [J].
GREENFIELD, JA ;
DUTTON, RW .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1520-1532