AN ULTRA-LOW ON-RESISTANCE POWER MOSFET FABRICATED BY USING A FULLY SELF-ALIGNED PROCESS

被引：35

作者：

UEDA, D

TAKAGI, H

KANO, G

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 04期

关键词：

D O I：

10.1109/T-ED.1987.23017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：926 / 930

页数：5

共 8 条

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