CHARACTERISTICS OF P-CHANNEL MOS FIELD-EFFECT TRANSISTORS WITH ION-IMPLANTED CHANNELS

被引：25

作者：

HSWE, M

SHOPBELL, ML

MAI, CC

PALMER, RB

机构：

来源：

SOLID-STATE ELECTRONICS | 1972年 / 15卷 / 11期

关键词：

D O I：

10.1016/0038-1101(72)90044-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1237 / +

页数：1

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