METALORGANIC VAPOR-PHASE EPITAXY OF CUALXGA1-X(SYSE1-Y)2

Epitaxial layers of the CuAlxGa1-x(SySe1-y)2 quaternary (x = 0) and pentanary (x not-equal 0) alloys lattice-matched to GaP substrates have been successfully grown by metalorganic vapor phase epitaxy using cyclopentadienyl-triethylphosphine-copper, triethylaluminum, triethylgallium, ditertiarybutylsulfide and diethylselenide as source materials. This pentanary alloy is the first ever grown to the best of our knowledge. Single and double heterostructures consisting of the quaternary and pentanary alloys have also been fabricated for the first time. A sample of the sin le heterostructure has shown stimulated emission at 77 K under pulsed light excitation.