PHOTOREFLECTANCE OF GAAS DOPING SUPERLATTICES

被引：27

作者：

SHEN, XC

SHEN, H

PARAYANTHAL, P

POLLAK, FH

SCHULMAN, JN

SMIRL, AL

MCFARLANE, RA

DHAENENS, I

机构：

[1] CUNY BROOKLYN COLL,DEPT PHYS,BROOKLYN,NY 11210

[2] HUGHES RES LABS,MALIBU,CA 90265

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1986年 / 2卷 / 06期

关键词：

BUILT-IN POTENTIALS - GALLIUM-ARSENIDE DOPING SUPERLATTICES - PHOTOREFLECTANCE;

D O I：

10.1016/0749-6036(86)90107-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：513 / 517

页数：5

共 14 条

[1]

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[2]

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[8]

GLENBOCKI OJ, APPLIED PHYSICS

[9] PHOTOREFLECTANCE OF GAAS/GAALAS MULTIPLE QUANTUM-WELLS - TOPOGRAPHICAL VARIATIONS IN BARRIER HEIGHT AND WELL WIDTH [J].

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SHEN, H ;

POLLAK, FH ;

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BEARD, WT .

APPLIED PHYSICS LETTERS, 1986, 48 (19) :1261-1263

[10] COMPOSITIONAL AND DOPING SUPER-LATTICES IN III-V-SEMICONDUCTORS [J].

PLOOG, K ;

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ADVANCES IN PHYSICS, 1983, 32 (03) :285-359

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