AN EMPIRICAL RELATION FOR SEMICONDUCTOR STRAINED-LAYER RELAXATION

被引：3

作者：

DODSON, BW

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 91卷 / 04期

关键词：

D O I：

10.1016/0022-0248(88)90135-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：649 / 651

页数：3

共 14 条

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[2]

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[7] DEPENDENCE OF CRITICAL LAYER THICKNESS ON STRAIN FOR INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES [J].

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LAIDIG, WD ;

ANDERSON, NG .

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[8]

FRITZ IJ, 1987, APP PHYS LETT, V50, P980

[9]

GOURLEY PL, IN PRESS APPL PHYS L

[10] DETERMINATION OF THE CRITICAL LAYER THICKNESS OF SI1-XGEX/SI HETEROSTRUCTURES BY DIRECT OBSERVATION OF MISFIT DISLOCATIONS [J].

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APPLIED PHYSICS LETTERS, 1988, 52 (05) :380-382

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