PHOTOLUMINESCENCE OF ION-IMPLANTATION-DAMAGED TYPE GAAS

[1] Arnold G. W., 1971, Radiation Effects, V7, P109, DOI 10.1080/00337577108232570

[2] DIFFUSION OF DEFECTS IN LOW TEMPERATURE ION IMPLANTED GAAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (08) : 1118 - &

[3] HARRIS JS, 1970, 1 INT C ION IMPL SEM

[4] OPTICAL PROPERTIES OF N-TYPE GAAS .I. DETERMINATION OF HOLE DIFFUSION LENGTH FROM OPTICAL ABSORPTION AND PHOTOLUMINESCENCE MEASUREMENTS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) : 3731 - &

[5] JOHNSON WS, 1959, PROJECTED RANGE STAT

[6] MAYER JW, 1970, ION IMPLANTATION SEM, pCH3

[7] RAMAN SCATTERING OF ION-IMPLANTED GAAS [J]. APPLIED PHYSICS LETTERS, 1971, 18 (12) : 574 - &

[8] OPTICAL DETECTION OF SURFACE DAMAGE IN GAAS INDUCED BY ARGON ION IMPLANTATION [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (12) : 4929 - &

[9] EFFECT OF ION-IMPLANTATION DAMAGE ON OPTICAL REFLECTION SPECTRUM OF GALLIUM ARSENIDE [J]. APPLIED PHYSICS LETTERS, 1970, 17 (07) : 274 - +

[10] SIGMUND P, 1967, P INT C APPLICATIONS, P215

[1] Arnold G. W., 1971, Radiation Effects, V7, P109, DOI 10.1080/00337577108232570

[2] DIFFUSION OF DEFECTS IN LOW TEMPERATURE ION IMPLANTED GAAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (08) : 1118 - &

[3] HARRIS JS, 1970, 1 INT C ION IMPL SEM

[4] OPTICAL PROPERTIES OF N-TYPE GAAS .I. DETERMINATION OF HOLE DIFFUSION LENGTH FROM OPTICAL ABSORPTION AND PHOTOLUMINESCENCE MEASUREMENTS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) : 3731 - &

[5] JOHNSON WS, 1959, PROJECTED RANGE STAT

[6] MAYER JW, 1970, ION IMPLANTATION SEM, pCH3

[7] RAMAN SCATTERING OF ION-IMPLANTED GAAS [J]. APPLIED PHYSICS LETTERS, 1971, 18 (12) : 574 - &

[8] OPTICAL DETECTION OF SURFACE DAMAGE IN GAAS INDUCED BY ARGON ION IMPLANTATION [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (12) : 4929 - &

[9] EFFECT OF ION-IMPLANTATION DAMAGE ON OPTICAL REFLECTION SPECTRUM OF GALLIUM ARSENIDE [J]. APPLIED PHYSICS LETTERS, 1970, 17 (07) : 274 - +

[10] SIGMUND P, 1967, P INT C APPLICATIONS, P215