TILTING ANGLE DEPENDENCE OF RUTHERFORD BACKSCATTERING - UNIFORMITY OF NEAR-SURFACE LAYERS

被引：10

作者：

CAMPISANO, SU

CIAVOLA, G

COSTANZO, E

FOTI, G

RIMINI, E

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS | 1978年 / 149卷 / 1-3期

关键词：

D O I：

10.1016/0029-554X(78)90865-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：229 / 233

页数：5

共 6 条

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RIMINI, E .

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[2] DETERMINATION OF CONCENTRATION PROFILE IN THIN METALLIC-FILMS - APPLICATIONS AND LIMITATIONS OF HE+ BACKSCATTERING [J].

CAMPISANO, SU ;

FOTI, G ;

GRASSO, F ;

RIMINI, E .

THIN SOLID FILMS, 1975, 25 (02) :431-440

[3]

Williams J. S., 1974, Radiation Effects, V22, P211, DOI 10.1080/10420157408230783

[4] RECRYSTALLIZATION OF ION-IMPLANTED SILICON LAYERS .1. PB-ION IMPLANTED SI [J].

WILLIAMS, JS ;

CHRISTODOULIDES, CE ;

GRANT, WA ;

ANDREW, R ;

BRAWN, JR ;

BOOTH, M .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 32 (1-2) :55-66

[5] OPTIMIZATION OF A RUTHERFORD BACKSCATTERING GEOMETRY FOR ENHANCED DEPTH RESOLUTION [J].

WILLIAMS, JS .

NUCLEAR INSTRUMENTS & METHODS, 1975, 126 (02) :205-215

[6]

WILLIAMS JS, 1976, ION BEAM SURFACE LAY, V1, P223

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