INGAASP QUATERNARY ALLOYS - COMPOSITION, REFRACTIVE-INDEX AND LATTICE MISMATCH

被引：35

作者：

OLSEN, GH

ZAMEROWSKI, TZ

SMITH, RT

BERTIN, EP

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1980年 / 9卷 / 06期

关键词：

D O I：

10.1007/BF02822730

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：977 / 987

页数：11

共 17 条

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[5]

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[6]

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[7] BANDGAP AND LATTICE-CONSTANT OF GAINASP AS A FUNCTION OF ALLOY COMPOSITION [J].

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[8] BAND-GAP VERSUS COMPOSITION AND DEMONSTRATION OF VEGARDS LAW FOR IN1-XGAXASYP1-Y LATTICE MATCHED TO INP [J].

NAHORY, RE ;

POLLACK, MA ;

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APPLIED PHYSICS LETTERS, 1978, 33 (07) :659-661

[9] THRESHOLD DEPENDENCE ON ACTIVE-LAYER THICKNESS IN INGAASP-INP DH LASERS [J].

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POLLACK, MA .

ELECTRONICS LETTERS, 1978, 14 (23) :727-729

[10] LATTICE DEFORMATIONS AND MISFIT DISLOCATIONS IN GALNASP-INP DOUBLE-HETEROSTRUCTURE LAYERS [J].

OE, K ;

SHINODA, Y ;

SUGIYAMA, K .

APPLIED PHYSICS LETTERS, 1978, 33 (11) :962-964

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