METAL-INSULATOR SEMICONDUCTOR AND METAL-INSULATOR METAL DEVICES DERIVED FROM ZIRCONIUM PHOSPHONATE THIN-FILMS

被引：41

作者：

KEPLEY, LJ

SACKETT, DD

BELL, CM

MALLOUK, TE

机构：

[1] Department of Chemistry and Biochemistry, The University of Texas at Austin, Austin

来源：

THIN SOLID FILMS | 1992年 / 208卷 / 01期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0040-6090(92)90958-E

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Metal-insulator-semiconductor and metal-insulator-metal (MIM) structures were fabricated by layer-by-layer adsorption of zirconium alkanediylbiphosphonates, Zr(O3PC(n)H2nPO3), n = 2, 4, 6, 8, 10, on silicon and gold surfaces. High frequency capacitance-voltage (C-V) measurements showed accumulation and depletion regions for 5-20 layer films grown on p-type silicon. Plots of layer capacitance vs. inverse thickness were linear and gave film dielectric constants of approximately 4.0. Films of thickness 25-30 nm grown on gold surfaces were also pinhole free, as evidenced by C-V and current-voltage measurements. Anomalously high values of epsilon/epsilon(0) for gold-metal phosphonate-gold MIM structures indicated that the evaporated gold top contact penetrated the insulating thin film to some extent.

引用

页码：132 / 136

页数：5

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