ONE-DIMENSIONAL STUDY OF BURIED-CHANNEL CHARGE-COUPLED-DEVICES

被引：22

作者：

ELSISSI, H ^{[1
]}

COBBOLD, RSC ^{[1
]}

机构：

[1] UNIV TORONTO,DEPT ELECT ENGN,TORONTO M5S 1A4,ONTARIO,CANADA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1974年 / ED21卷 / 07期

关键词：

D O I：

10.1109/T-ED.1974.17945

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：437 / 447

页数：11

共 10 条

[1] CHARGE COUPLED SEMICONDUCTOR DEVICES [J].

BOYLE, WS ;

SMITH, GE .

BELL SYSTEM TECHNICAL JOURNAL, 1970, 49 (04) :587-+

[2]

ELSISSI H, UNPUBLISHED WORK

[3] PERISTALTIC CHARGE-COUPLED DEVICE - NEW TYPE OF CHARGE-TRANSFER DEVICE [J].

ESSER, LJM .

ELECTRONICS LETTERS, 1972, 8 (25) :620-&

[4]

ESSER LJM, 1973, TECH DIGEST, P17

[5]

GUNSAGER KC, 1973, TECH DIG INT ELECTRO, P21

[6] CHARGE-DISTRIBUTION IN BURIED-CHANNEL CHARGE-COUPLED DEVICES [J].

KENT, WH .

BELL SYSTEM TECHNICAL JOURNAL, 1973, 52 (06) :1009-1023

[7]

KIM CK, 1972, NOV NEREM

[8] POTENTIAL IN A CHARGE COUPLED DEVICE WITH NO MOBILE MINORITY-CARRIERS AND ZERO PLATE SEPARATION [J].

MCKENNA, J ;

SCHRYER, NL .

BELL SYSTEM TECHNICAL JOURNAL, 1973, 52 (05) :669-696

[9] CHARGE-TRANSFER DEVICES [J].

TOMPSETT, MF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1972, 9 (04) :1166-+

[10] BURIED CHANNEL CHARGE COUPLED DEVICE [J].

WALDEN, RH ;

SCHRYER, NL ;

SMITH, GE ;

STRAIN, RJ ;

MCKENNA, J ;

KRAMBECK, RH .

BELL SYSTEM TECHNICAL JOURNAL, 1972, 51 (07) :1635-+

← 1 →