BURIED CHANNEL CHARGE COUPLED DEVICE

被引：77

作者：

WALDEN, RH

SCHRYER, NL

SMITH, GE

STRAIN, RJ

MCKENNA, J

KRAMBECK, RH

机构：

来源：

BELL SYSTEM TECHNICAL JOURNAL | 1972年 / 51卷 / 07期

关键词：

D O I：

10.1002/j.1538-7305.1972.tb02674.x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1635 / +

共 9 条

[1] BERGLUND CN, 1972, APPL PHYS LETT
[2] CHARGE COUPLED SEMICONDUCTOR DEVICES
BOYLE, WS
SMITH, GE
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1970, 49 (04): : 587 - +
[3] CHARGE-COUPLED DEVICES - NEW APPROACH TO MIS DEVICE STRUCTURES
BOYLE, WS
SMITH, GE
[J]. IEEE SPECTRUM, 1971, 8 (07) : 18 - &
[4] BOYLE WS, TO BE PUBLISHED
[5] SURFACE CHARGE TRANSPORT IN SILICON
ENGELER, WE
TIEMANN, JJ
BAERTSCH, RD
[J]. APPLIED PHYSICS LETTERS, 1970, 17 (11) : 469 - &
[6] MCKENNA J, UNPUBLISHED WORK
[7] NONLINEAR DIFFUSION ANALYSIS OF CHARGE-COUPLED-DEVICE TRANSFER
STRAIN, RJ
SCHRYER, NL
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1971, 50 (06): : 1721 - +
[8] STRAIN RJ, TO BE PUBLISHED
[9] TOMPSETT MF, UNPUBLISHED WORK