ORDERED STRUCTURE AND ION MIGRATION IN SILICON DIOXIDE FILMS

被引：39

作者：

SUGANO, T

HOH, K

KUDO, K

HISHINUMA, N

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1968年 / 7卷 / 07期

关键词：

D O I：

10.1143/JJAP.7.715

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：715 / +

页数：1

共 34 条

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