A NEW THEORETICAL-MODEL FOR TRANSVERSE ACOUSTOELECTRIC VOLTAGE MEASUREMENTS ON SI/SIO2 STRUCTURES

被引：8

作者：

PALMA, F

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 01期

关键词：

D O I：

10.1063/1.343871

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：292 / 297

页数：6

相关论文

共 20 条

[1] ABEDIN MN, 1988, IN PRESS 4TH P INT C
[2] SPECTROSCOPY OF INAS USING SAW GENERATED TRANSVERSE ACOUSTOELECTRIC VOLTAGE
AYUB, FMM
DAS, P
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 433 - 436
[3] SURFACE MOBILITY MEASUREMENT USING ACOUSTIC SURFACE-WAVES
BERS, A
CAFARELL.JH
BURKE, BE
[J]. APPLIED PHYSICS LETTERS, 1973, 22 (08) : 399 - 401
[4] NORMAL MODES OF CARRIER WAVES IN SEMICONDUCTOR PLATES
BLOTEKJAER, K
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (01) : 30 - +
[5] CONTACTLESS SEMICONDUCTOR SURFACE CHARACTERIZATION USING SURFACE ACOUSTIC-WAVES
DAS, P
WEBSTER, RT
ESTRADAVAZQUEZ, H
WANG, WC
[J]. SURFACE SCIENCE, 1979, 86 (JUL) : 848 - 857
[6] DAS P, 1986, P IEEE ULTRASON S, P278
[7] NONDESTRUCTIVE EVALUATION OF THE SEMICONDUCTOR INTERFACE STATES DENSITY USING THE TRANSVERSE ACOUSTOELECTRIC VOLTAGE
DAVARI, B
AZAR, MT
LIU, T
DAS, P
[J]. SOLID-STATE ELECTRONICS, 1986, 29 (01) : 75 - 81
[8] SEMICONDUCTOR SURFACE CHARACTERIZATION USING TRANSVERSE ACOUSTOELECTRIC VOLTAGE VERSUS VOLTAGE MEASUREMENTS
DAVARI, B
DAS, P
BHARAT, R
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) : 415 - 420
[9] DAVARI B, 1982, P IEEE ULTR S, P479
[10] GHANDHI SK, 1968, THEORY PRACTICE MICR, P420