NONDESTRUCTIVE EVALUATION OF THE SEMICONDUCTOR INTERFACE STATES DENSITY USING THE TRANSVERSE ACOUSTOELECTRIC VOLTAGE

被引：12

作者：

DAVARI, B ^{[1
]}

AZAR, MT ^{[1
]}

LIU, T ^{[1
]}

DAS, P ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST, DEPT ELECT COMP & SYST ENGN, TROY, NY 12180 USA

来源：

SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 01期

关键词：

D O I：

10.1016/0038-1101(86)90200-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：75 / 81

页数：7

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