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A NEW PROFILING TECHNIQUE APPLICABLE TO THE MEASUREMENTS SENSITIVE TO THE FREE-CARRIER CONCENTRATION RATHER THAN THE DEPLETION-LAYER THICKNESS
被引:7
作者
:
DAVARI, B
论文数:
0
引用数:
0
h-index:
0
DAVARI, B
DAS, P
论文数:
0
引用数:
0
h-index:
0
DAS, P
机构
:
来源
:
IEEE ELECTRON DEVICE LETTERS
|
1983年
/ 4卷
/ 06期
关键词
:
D O I
:
10.1109/EDL.1983.25693
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:169 / 172
页数:4
相关论文
共 14 条
[1]
[Anonymous], 1980, ELECTROCHEMICAL METH
[2]
A STUDY OF THE HIGH-RESISTIVITY GAAS SURFACE AND THE GAAS OXIDE INTERFACE USING 2-BEAM TRANSVERSE ACOUSTICOELECTRIC VOLTAGE SPECTROSCOPY
DAVARI, B
论文数:
0
引用数:
0
h-index:
0
DAVARI, B
DAS, P
论文数:
0
引用数:
0
h-index:
0
DAS, P
[J].
JOURNAL OF APPLIED PHYSICS,
1982,
53
(05)
: 3668
-
3672
[3]
SEMICONDUCTOR SURFACE CHARACTERIZATION USING TRANSVERSE ACOUSTOELECTRIC VOLTAGE VERSUS VOLTAGE MEASUREMENTS
DAVARI, B
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT CORP,CTR SCI,ANAHEIM,CA 92803
ROCKWELL INT CORP,CTR SCI,ANAHEIM,CA 92803
DAVARI, B
DAS, P
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT CORP,CTR SCI,ANAHEIM,CA 92803
ROCKWELL INT CORP,CTR SCI,ANAHEIM,CA 92803
DAS, P
BHARAT, R
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT CORP,CTR SCI,ANAHEIM,CA 92803
ROCKWELL INT CORP,CTR SCI,ANAHEIM,CA 92803
BHARAT, R
[J].
JOURNAL OF APPLIED PHYSICS,
1983,
54
(01)
: 415
-
420
[4]
QUENCHING AND ENHANCEMENT OF THE EXCITON AND SUBBAND-GAP ABSORPTION IN GAAS-CR USING 2-BEAM TRANSVERSE ACOUSTOELECTRIC VOLTAGE SPECTROSCOPY
DAVARI, B
论文数:
0
引用数:
0
h-index:
0
DAVARI, B
DAS, P
论文数:
0
引用数:
0
h-index:
0
DAS, P
[J].
APPLIED PHYSICS LETTERS,
1982,
40
(09)
: 807
-
809
[5]
DAVARI B, 1982, P IEEE ULTRASONICS S, P379
[6]
INFRARED REFLECTANCE STUDIES OF BULK AND EPITAXIAL-FILM N-TYPE GAAS
HOLM, RT
论文数:
0
引用数:
0
h-index:
0
机构:
USN, RES LAB, WASHINGTON, DC 20375 USA
USN, RES LAB, WASHINGTON, DC 20375 USA
HOLM, RT
GIBSON, JW
论文数:
0
引用数:
0
h-index:
0
机构:
USN, RES LAB, WASHINGTON, DC 20375 USA
USN, RES LAB, WASHINGTON, DC 20375 USA
GIBSON, JW
PALIK, ED
论文数:
0
引用数:
0
h-index:
0
机构:
USN, RES LAB, WASHINGTON, DC 20375 USA
USN, RES LAB, WASHINGTON, DC 20375 USA
PALIK, ED
[J].
JOURNAL OF APPLIED PHYSICS,
1977,
48
(01)
: 212
-
223
[7]
INFLUENCE OF DEBYE LENGTH ON C-V MEASUREMENTS OF DOPING PROFILES
JOHNSON, WC
论文数:
0
引用数:
0
h-index:
0
JOHNSON, WC
PANOUSIS, PT
论文数:
0
引用数:
0
h-index:
0
PANOUSIS, PT
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1971,
ED18
(10)
: 965
-
&
[8]
ON MEASUREMENT OF IMPURITY ATOM DISTRIBUTIONS BY DIFFERENTIAL CAPACITANCE TECHNIQUE
KENNEDY, DP
论文数:
0
引用数:
0
h-index:
0
KENNEDY, DP
OBRIEN, RR
论文数:
0
引用数:
0
h-index:
0
OBRIEN, RR
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1969,
13
(02)
: 212
-
&
[9]
ON MEASUREMENT OF IMPURITY ATOM DISTRIBUTIONS IN SILICON BY DIFFERENTIAL CAPACITANCE TECHNIQUE
KENNEDY, DP
论文数:
0
引用数:
0
h-index:
0
KENNEDY, DP
MURLEY, PC
论文数:
0
引用数:
0
h-index:
0
MURLEY, PC
KLEINFELDER, W
论文数:
0
引用数:
0
h-index:
0
KLEINFELDER, W
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1968,
12
(05)
: 399
-
+
[10]
Many A, 1971, SEMICONDUCTOR SURFAC
←
1
2
→
共 14 条
[1]
[Anonymous], 1980, ELECTROCHEMICAL METH
[2]
A STUDY OF THE HIGH-RESISTIVITY GAAS SURFACE AND THE GAAS OXIDE INTERFACE USING 2-BEAM TRANSVERSE ACOUSTICOELECTRIC VOLTAGE SPECTROSCOPY
DAVARI, B
论文数:
0
引用数:
0
h-index:
0
DAVARI, B
DAS, P
论文数:
0
引用数:
0
h-index:
0
DAS, P
[J].
JOURNAL OF APPLIED PHYSICS,
1982,
53
(05)
: 3668
-
3672
[3]
SEMICONDUCTOR SURFACE CHARACTERIZATION USING TRANSVERSE ACOUSTOELECTRIC VOLTAGE VERSUS VOLTAGE MEASUREMENTS
DAVARI, B
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT CORP,CTR SCI,ANAHEIM,CA 92803
ROCKWELL INT CORP,CTR SCI,ANAHEIM,CA 92803
DAVARI, B
DAS, P
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT CORP,CTR SCI,ANAHEIM,CA 92803
ROCKWELL INT CORP,CTR SCI,ANAHEIM,CA 92803
DAS, P
BHARAT, R
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT CORP,CTR SCI,ANAHEIM,CA 92803
ROCKWELL INT CORP,CTR SCI,ANAHEIM,CA 92803
BHARAT, R
[J].
JOURNAL OF APPLIED PHYSICS,
1983,
54
(01)
: 415
-
420
[4]
QUENCHING AND ENHANCEMENT OF THE EXCITON AND SUBBAND-GAP ABSORPTION IN GAAS-CR USING 2-BEAM TRANSVERSE ACOUSTOELECTRIC VOLTAGE SPECTROSCOPY
DAVARI, B
论文数:
0
引用数:
0
h-index:
0
DAVARI, B
DAS, P
论文数:
0
引用数:
0
h-index:
0
DAS, P
[J].
APPLIED PHYSICS LETTERS,
1982,
40
(09)
: 807
-
809
[5]
DAVARI B, 1982, P IEEE ULTRASONICS S, P379
[6]
INFRARED REFLECTANCE STUDIES OF BULK AND EPITAXIAL-FILM N-TYPE GAAS
HOLM, RT
论文数:
0
引用数:
0
h-index:
0
机构:
USN, RES LAB, WASHINGTON, DC 20375 USA
USN, RES LAB, WASHINGTON, DC 20375 USA
HOLM, RT
GIBSON, JW
论文数:
0
引用数:
0
h-index:
0
机构:
USN, RES LAB, WASHINGTON, DC 20375 USA
USN, RES LAB, WASHINGTON, DC 20375 USA
GIBSON, JW
PALIK, ED
论文数:
0
引用数:
0
h-index:
0
机构:
USN, RES LAB, WASHINGTON, DC 20375 USA
USN, RES LAB, WASHINGTON, DC 20375 USA
PALIK, ED
[J].
JOURNAL OF APPLIED PHYSICS,
1977,
48
(01)
: 212
-
223
[7]
INFLUENCE OF DEBYE LENGTH ON C-V MEASUREMENTS OF DOPING PROFILES
JOHNSON, WC
论文数:
0
引用数:
0
h-index:
0
JOHNSON, WC
PANOUSIS, PT
论文数:
0
引用数:
0
h-index:
0
PANOUSIS, PT
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1971,
ED18
(10)
: 965
-
&
[8]
ON MEASUREMENT OF IMPURITY ATOM DISTRIBUTIONS BY DIFFERENTIAL CAPACITANCE TECHNIQUE
KENNEDY, DP
论文数:
0
引用数:
0
h-index:
0
KENNEDY, DP
OBRIEN, RR
论文数:
0
引用数:
0
h-index:
0
OBRIEN, RR
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1969,
13
(02)
: 212
-
&
[9]
ON MEASUREMENT OF IMPURITY ATOM DISTRIBUTIONS IN SILICON BY DIFFERENTIAL CAPACITANCE TECHNIQUE
KENNEDY, DP
论文数:
0
引用数:
0
h-index:
0
KENNEDY, DP
MURLEY, PC
论文数:
0
引用数:
0
h-index:
0
MURLEY, PC
KLEINFELDER, W
论文数:
0
引用数:
0
h-index:
0
KLEINFELDER, W
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1968,
12
(05)
: 399
-
+
[10]
Many A, 1971, SEMICONDUCTOR SURFAC
←
1
2
→