HIGH-SPEED FULLY SELF-ALIGNED SINGLE-CRYSTAL CONTACTED SILICON BIPOLAR-TRANSISTOR

被引：1

作者：

GLENN, JL

NEUDECK, GW

机构：

[1] School of Electrical Engineering, Purdue University, Indiana, West Lafayette

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 20期

关键词：

Bipolar transistors; Epitaxial lateral overgrowth; High-speed devices; Self-aligned;

D O I：

10.1049/el:19901073

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel high-speed self-aligned npn bipolar transistor fabrication process is presented. Base contacts are formed by epitaxial lateral overgrowth of single-crystal silicon on silicon-dioxide. Impurity-enhanced oxidation of silicon is used to achieve self-alignment of the emitter. Ultra-low resistance p-type base contacts have been fabricated with measured sheet resistances of 19Ω/⌕. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1677 / 1679

页数：3

共 7 条

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[7] SHIBA T, 1989, 1989 INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P225

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