CONFINED LATERAL SELECTIVE EPITAXIAL-GROWTH OF SILICON FOR DEVICE FABRICATION

A novel epitaxy technique, called confined lateral selective epitaxial growth (CLSEG), is introduced which produces wide, thin slabs of single-crystal silicon over insulator, using only conventional processing. As-grown films of CLSEG 0.9 μm thick, 8.0 μm wide, and 500 μm long were produced at 1000°C at reduced pressure. Junction diodes fabricated in CLSEG material show ideality factors of 1.05 with reverse leakage currents comparable to diodes built in SEG homoepitaxial material. Metal-gate p-channel MOSFET’s in CLSEG with channel dopings of 2 × 1016 cm−3 exhibit average mobilities of 283 cm2/V-s and subthreshold slopes of 223 mV/decade. © 1990 IEEE