SELECTIVE EPITAXIAL-GROWTH SILICON BIPOLAR-TRANSISTORS FOR MATERIAL CHARACTERIZATION

被引：11

作者：

SIEKKINEN, JW

KLAASEN, WA

NEUDECK, GW

机构：

[1] Purdue Univ, West Lafayette, IN, USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 10期

关键词：

Manuscript received April 15; 1988; revised June 23; 1988. This work was supported by the Semiconductor Research Corporation under Contract 87-SJ-108. The authors are with the School of Electrical Engineering; Purdue University; West Lafayette; IN 47907. IEEE Log Number 8823 118;

D O I：

10.1109/16.7366

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1640 / 1644

页数：5

共 11 条

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