HIGH-SPEED POLYSILICON EMITTER-BASE BIPOLAR-TRANSISTOR

被引：18

作者：

PARK, HK

BOYER, K

CLAWSON, C

EIDEN, G

TANG, A

YAMAGUCHI, T

SACHITANO, J

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 12期

关键词：

D O I：

10.1109/EDL.1986.26510

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：658 / 660

页数：3

共 9 条

[1]

CHU SF, 1982, P VLSI SCI TECHNOL, P306

[2]

GETREU I, 1976, MODELING BIPOLAR TRA, P154

[3]

KONAKA S, 1984, 16TH P C SOL STAT DE, P209

[4] EFFECT OF EMITTER CONTACT ON CURRENT GAIN OF SILICON BIPOLAR-DEVICES [J].

NING, TH ;

ISAAC, RD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) :2051-2055

[5]

PARK HK, 1984, J VAC SCI TECHNOL A, V2, P264, DOI 10.1116/1.572576

[6]

SUZUKI M, 1985, IEEE ELECTR DEVICE L, V6, P181, DOI 10.1109/EDL.1985.26089

[7] 1.25 MU-M DEEP-GROOVE-ISOLATED SELF-ALIGNED BIPOLAR CIRCUITS [J].

TANG, DD ;

SOLOMON, PM ;

NING, TH ;

ISAAC, RD ;

BURGER, RE .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1982, 17 (05) :925-931

[8]

Tashiro T., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P686

[9]

Vora M., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P34

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