OXIDE DEGRADATION DURING SELECTIVE EPITAXIAL-GROWTH OF SILICON

[1] BORLAND JO, 1987, P INT ELECTRON DEVIC, P12

[2] INTERACTION OF H2O WITH SI(111) AND (100) - CRITICAL CONDITIONS FOR THE GROWTH OF SIO2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (12) : 2924 - 2928

[3] ACCELERATION FACTORS FOR THE DECOMPOSITION OF THERMALLY GROWN SIO2-FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (01) : 240 - 244

[4] DEFECT FORMATION IN THERMAL SIO2 BY HIGH-TEMPERATURE ANNEALING [J]. APPLIED PHYSICS LETTERS, 1986, 49 (22) : 1525 - 1527

[5] ROLE OF OXYGEN IN DEFECT-RELATED BREAKDOWN IN THIN SIO2-FILMS ON SI (100) [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (09) : 4584 - 4588

[6] DEVICE CHARACTERIZATION ON MONOCRYSTALLINE SILICON GROWN OVER SIO2 BY THE ELO (EPITAXIAL LATERAL OVERGROWTH) PROCESS [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (02) : 32 - 35

[7] JASTRZEBSKI L, 1987, 10TH P INT C CVD, P334

[8] Liu S. T., 1987, Proceedings of the Tenth International Conference on Chemical Vapor Deposition 1987, P428

[9] FAST ETCHING IMPERFECTIONS IN SILICON DIOXIDE FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (01) : 89 - &

[10] A NEW EPITAXIAL LATERAL OVERGROWTH SILICON BIPOLAR-TRANSISTOR [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (10) : 492 - 495

[1] BORLAND JO, 1987, P INT ELECTRON DEVIC, P12

[2] INTERACTION OF H2O WITH SI(111) AND (100) - CRITICAL CONDITIONS FOR THE GROWTH OF SIO2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (12) : 2924 - 2928

[3] ACCELERATION FACTORS FOR THE DECOMPOSITION OF THERMALLY GROWN SIO2-FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (01) : 240 - 244

[4] DEFECT FORMATION IN THERMAL SIO2 BY HIGH-TEMPERATURE ANNEALING [J]. APPLIED PHYSICS LETTERS, 1986, 49 (22) : 1525 - 1527

[5] ROLE OF OXYGEN IN DEFECT-RELATED BREAKDOWN IN THIN SIO2-FILMS ON SI (100) [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (09) : 4584 - 4588

[6] DEVICE CHARACTERIZATION ON MONOCRYSTALLINE SILICON GROWN OVER SIO2 BY THE ELO (EPITAXIAL LATERAL OVERGROWTH) PROCESS [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (02) : 32 - 35

[7] JASTRZEBSKI L, 1987, 10TH P INT C CVD, P334

[8] Liu S. T., 1987, Proceedings of the Tenth International Conference on Chemical Vapor Deposition 1987, P428

[9] FAST ETCHING IMPERFECTIONS IN SILICON DIOXIDE FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (01) : 89 - &

[10] A NEW EPITAXIAL LATERAL OVERGROWTH SILICON BIPOLAR-TRANSISTOR [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (10) : 492 - 495