OXIDE DEGRADATION DURING SELECTIVE EPITAXIAL-GROWTH OF SILICON

被引：18

作者：

FRIEDRICH, JA

NEUDECK, GW

机构：

来源：

关键词：

D O I：

10.1063/1.341492

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3538 / 3541

页数：4

共 14 条

[11] REACTION OF OXYGEN WITH SI(111) AND (100) - CRITICAL CONDITIONS FOR THE GROWTH OF SIO2
SMITH, FW
GHIDINI, G
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) : 1300 - 1306
[12] SOME CONSIDERATIONS IN THE FORMULATION OF IC YIELD STATISTICS - COMMENT
STAPPER, CH
[J]. SOLID-STATE ELECTRONICS, 1981, 24 (02) : 127 - 132
[13] ETCHING OF SIO2-FILMS BY SI IN ULTRAHIGH-VACUUM
TABE, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (03): : 534 - 538
[14] SELECTIVE SILICON EPITAXY USING REDUCED PRESSURE TECHNIQUE
TANNO, K
ENDO, N
KITAJIMA, H
KUROGI, Y
TSUYA, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (09): : L564 - L566