ROLE OF OXYGEN IN DEFECT-RELATED BREAKDOWN IN THIN SIO2-FILMS ON SI (100)

[1] BALK P, 1984, SOLID STATE ELECTRON, V27, P709, DOI 10.1016/0038-1101(84)90019-4

[2] HIGH-TEMPERATURE OXIDATION, REDUCTION, AND VOLATILIZATION REACTIONS OF SILICON AND SILICON-CARBIDE [J]. OXIDATION OF METALS, 1972, 4 (03): : 181 - +

[3] DEFECT FORMATION IN THERMAL SIO2 BY HIGH-TEMPERATURE ANNEALING [J]. APPLIED PHYSICS LETTERS, 1986, 49 (22) : 1525 - 1527

[4] ON PHYSICAL MODELS FOR GATE OXIDE BREAKDOWN [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (08) : 302 - 305

[5] BREAKDOWN IN SILICON-OXIDES CORRELATION WITH CU PRECIPITATES [J]. APPLIED PHYSICS LETTERS, 1984, 45 (03) : 270 - 271

[6] EFFECTS OF PLASMA CLEANING ON THE DIELECTRIC-BREAKDOWN IN SIO2 FILM ON SI [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (01) : 224 - 225

[7] MECHANISM OF SELF-HEALING ELECTRICAL BREAKDOWN IN MOS STRUCTURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (11) : 788 - +

[8] KOBAYASHI M, 1985, UNPUB ELECTROCHEMICA, P94

[9] REDUCTION OF ELECTRON TRAPPING IN SILICON DIOXIDE BY HIGH-TEMPERATURE NITROGEN ANNEAL [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5691 - 5695

[10] LOW VOLTAGE ELECTRON DIFFRACTION STUDY OF OXIDATION AND REDUCTION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (06) : 2089 - &

[1] BALK P, 1984, SOLID STATE ELECTRON, V27, P709, DOI 10.1016/0038-1101(84)90019-4

[2] HIGH-TEMPERATURE OXIDATION, REDUCTION, AND VOLATILIZATION REACTIONS OF SILICON AND SILICON-CARBIDE [J]. OXIDATION OF METALS, 1972, 4 (03): : 181 - +

[3] DEFECT FORMATION IN THERMAL SIO2 BY HIGH-TEMPERATURE ANNEALING [J]. APPLIED PHYSICS LETTERS, 1986, 49 (22) : 1525 - 1527

[4] ON PHYSICAL MODELS FOR GATE OXIDE BREAKDOWN [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (08) : 302 - 305

[5] BREAKDOWN IN SILICON-OXIDES CORRELATION WITH CU PRECIPITATES [J]. APPLIED PHYSICS LETTERS, 1984, 45 (03) : 270 - 271

[6] EFFECTS OF PLASMA CLEANING ON THE DIELECTRIC-BREAKDOWN IN SIO2 FILM ON SI [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (01) : 224 - 225

[7] MECHANISM OF SELF-HEALING ELECTRICAL BREAKDOWN IN MOS STRUCTURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (11) : 788 - +

[8] KOBAYASHI M, 1985, UNPUB ELECTROCHEMICA, P94

[9] REDUCTION OF ELECTRON TRAPPING IN SILICON DIOXIDE BY HIGH-TEMPERATURE NITROGEN ANNEAL [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5691 - 5695

[10] LOW VOLTAGE ELECTRON DIFFRACTION STUDY OF OXIDATION AND REDUCTION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (06) : 2089 - &