ROLE OF OXYGEN IN DEFECT-RELATED BREAKDOWN IN THIN SIO2-FILMS ON SI (100)

被引：30

作者：

HOFMANN, K ^{[1
]}

RUBLOFF, GW ^{[1
]}

YOUNG, DR ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 09期

关键词：

D O I：

10.1063/1.338365

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4584 / 4588

页数：5

共 24 条

[11] LEAKAGE AND BREAKDOWN IN THIN OXIDE CAPACITORS - CORRELATION WITH DECORATED STACKING-FAULTS
LIN, PSD
MARCUS, RB
SHENG, TT
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (09) : 1878 - 1883
[12] FAST ETCHING IMPERFECTIONS IN SILICON DIOXIDE FILMS
LOPEZ, AD
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (01) : 89 - &
[13] ACCELERATION FACTORS FOR THIN OXIDE BREAKDOWN
MCPHERSON, JW
BAGLEE, DA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) : 1903 - 1908
[14] HIGH-TEMPERATURE ANNEALING OF OXIDIZED SILICON SURFACES
MONTILLO, F
BALK, P
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (09) : 1463 - +
[15] DIELECTRIC BREAKDOWN IN SILICON DIOXIDE FILMS ON SILICON .1. MEASUREMENT AND INTERPRETATION
OSBURN, CM
ORMOND, DW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (05) : 591 - +
[16] DIELECTRIC-BREAKDOWN PROPERTIES OF SIO2-FILMS GROWN IN HALOGEN AND HYDROGEN-CONTAINING ENVIRONMENTS
OSBURN, CM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (06) : 809 - 815
[17] ELECTRICAL-CONDUCTION AND DIELECTRIC BREAKDOWN IN SILICON DIOXIDE FILMS ON SILICON
OSBURN, CM
WEITZMAN, EJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (05) : 603 - +
[18] DIELECTRIC BREAKDOWN IN SILICON DIOXIDE FILMS ON SILICON .2. INFLUENCE OF PROCESSING AND MATERIALS
OSBURN, CM
ORMOND, DW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (05) : 597 - +
[19] THE FORMATION OF SIO2 IN AN RF GENERATED OXYGEN PLASMA .2. THE PRESSURE RANGE ABOVE 10 MTORR
RAY, AK
REISMAN, A
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (11) : 2466 - 2472
[20] OXIDATION OF SILICON IN PRESENCE OF CHLORINE AND CHLORINE COMPOUNDS
SINGH, BR
BALK, P
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : 453 - 461

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