OXIDATION OF SILICON IN PRESENCE OF CHLORINE AND CHLORINE COMPOUNDS

[1] EFFECTS OF HCL GETTERING, CR DOPING AND AL+ IMPLANTATION ON HARDENED SIO21 [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (06) : 167 - 171

[2] BACCARNI G, 1973, J ELECTROCHEM SOC, V170, P1436

[3] PHOSPHOSILICATE GLASS STABILIZATION OF FET DEVICES [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (09) : 1558 - +

[4] BHATTACHARYA A, 1974, MAY EL SOC M SAN FRA

[5] BROJDO S, 1972, OCT EL SOC M MIAM BE

[6] Burgess R.R., 1973, SEMICONDUCTOR SILICO, P363

[7] OXIDE CHARGE REDUCTION BY CHEMICAL GETTERING WITH TRICHLOROETHYLENE DURING THERMAL OXIDATION OF SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (02) : 223 - +

[8] AUGER ANALYSIS OF CHLORINE IN HCL-GROWN, OR CL2-GROWN SIO2 FILMS [J]. APPLIED PHYSICS LETTERS, 1973, 22 (08) : 380 - 381

[9] CHU TL, 1968, SOLID STATE ELECTRON, V18, P867

[10] CLAEYS CL, 1977, MAY EL SOC M PHIL

[1] EFFECTS OF HCL GETTERING, CR DOPING AND AL+ IMPLANTATION ON HARDENED SIO21 [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (06) : 167 - 171

[2] BACCARNI G, 1973, J ELECTROCHEM SOC, V170, P1436

[3] PHOSPHOSILICATE GLASS STABILIZATION OF FET DEVICES [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (09) : 1558 - +

[4] BHATTACHARYA A, 1974, MAY EL SOC M SAN FRA

[5] BROJDO S, 1972, OCT EL SOC M MIAM BE

[6] Burgess R.R., 1973, SEMICONDUCTOR SILICO, P363

[7] OXIDE CHARGE REDUCTION BY CHEMICAL GETTERING WITH TRICHLOROETHYLENE DURING THERMAL OXIDATION OF SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (02) : 223 - +

[8] AUGER ANALYSIS OF CHLORINE IN HCL-GROWN, OR CL2-GROWN SIO2 FILMS [J]. APPLIED PHYSICS LETTERS, 1973, 22 (08) : 380 - 381

[9] CHU TL, 1968, SOLID STATE ELECTRON, V18, P867

[10] CLAEYS CL, 1977, MAY EL SOC M PHIL