OXIDATION OF SILICON IN PRESENCE OF CHLORINE AND CHLORINE COMPOUNDS

[51] PEEL JL, 1975, JUL IEEE ANN C NUCL

[52] ELIMINATION OF PROCESS-INDUCED STACKING-FAULTS BY PREOXIDATION GETTERING OF SI WAFERS .2. SI-3 N-4 PROCESS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (04) : 565 - 570

[53] KINETICS AND MECHANISM OF THERMAL OXIDATION OF SILICON WITH SPECIAL EMPHASIS ON IMPURITY EFFECTS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (03) : 551 - +

[54] RITCHEY P, 1975, OCT EL SOC M DALL

[55] RITCHEY PM, 1976, OCT EL SOC M LAS VEG

[56] USE OF HCI GETTERING IN SILICON DEVICE PROCESSING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (01) : 141 - +

[57] SODIUM PASSIVATION IN HCL OXIDE-FILMS ON SI [J]. APPLIED PHYSICS LETTERS, 1977, 30 (02) : 104 - 106

[58] HYDROGEN CHLORIDE AND CHLORINE GETTERING - EFFECTIVE TECHNIQUE FOR IMPROVING PERFORMANCE OF SILICON DEVICES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (06) : 747 - +

[59] ELIMINATION OF OXIDATION-INDUCED STACKING-FAULTS BY PREOXIDATION GETTERING OF SILICON WAFERS .1. PHOSPHORUS DIFFUSION-INDUCED MISFIT DISLOCATIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) : 1725 - 1729

[60] ROZGONYI GA, 1976, J ELECTROCHEM SOC, V123, P510

[51] PEEL JL, 1975, JUL IEEE ANN C NUCL

[52] ELIMINATION OF PROCESS-INDUCED STACKING-FAULTS BY PREOXIDATION GETTERING OF SI WAFERS .2. SI-3 N-4 PROCESS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (04) : 565 - 570

[53] KINETICS AND MECHANISM OF THERMAL OXIDATION OF SILICON WITH SPECIAL EMPHASIS ON IMPURITY EFFECTS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (03) : 551 - +

[54] RITCHEY P, 1975, OCT EL SOC M DALL

[55] RITCHEY PM, 1976, OCT EL SOC M LAS VEG

[56] USE OF HCI GETTERING IN SILICON DEVICE PROCESSING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (01) : 141 - +

[57] SODIUM PASSIVATION IN HCL OXIDE-FILMS ON SI [J]. APPLIED PHYSICS LETTERS, 1977, 30 (02) : 104 - 106

[58] HYDROGEN CHLORIDE AND CHLORINE GETTERING - EFFECTIVE TECHNIQUE FOR IMPROVING PERFORMANCE OF SILICON DEVICES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (06) : 747 - +

[59] ELIMINATION OF OXIDATION-INDUCED STACKING-FAULTS BY PREOXIDATION GETTERING OF SILICON WAFERS .1. PHOSPHORUS DIFFUSION-INDUCED MISFIT DISLOCATIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) : 1725 - 1729

[60] ROZGONYI GA, 1976, J ELECTROCHEM SOC, V123, P510