OXIDATION OF SILICON IN PRESENCE OF CHLORINE AND CHLORINE COMPOUNDS

[61] SURFACE-STATE DENSITY AT (HYDROGEN-CHLORIDE) OXIDE-SILICON INTERFACE [J]. ELECTRONICS LETTERS, 1972, 8 (16) : 402 - &

[62] SHRINKAGE EFFECT OF STACKING-FAULTS DURING HCL OXIDATION IN STEAM [J]. APPLIED PHYSICS LETTERS, 1976, 29 (03) : 136 - 138

[63] STACKING-FAULT GENERATION SUPPRESSION AND GROWN-IN DEFECT ELIMINATION IN DISLOCATION FREE SILICON WAFERS BY HCL OXIDATION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (01) : 1 - 10

[64] SHIRAKI M, 1975, JPN J APPL PHYS, V14, P147

[65] SHIRAKI M, 1976, JPN J APPL PHYS, V15, P83

[66] INSTABILITY PHENOMENA IN THIN INSULATING FILMS ON SILICON [J]. MICROELECTRONICS RELIABILITY, 1976, 15 (05) : 385 - 398

[67] SINGH BR, 1974, MAY EL SOC M SAN FRA

[68] POLARIZATION PHENOMENA AND OTHER PROPERTIES OF PHOSPHOSILICATE GLASS FILMS ON SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (03) : 263 - &

[69] SNOW EH, 1968, T METALL SOC AIME, V242, P512

[70] CHARACTERIZATION CONTROL AND USE OF DIELECTRIC CHARGE EFFECTS IN SILICON TECHNOLOGY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (01): : 1 - +

[61] SURFACE-STATE DENSITY AT (HYDROGEN-CHLORIDE) OXIDE-SILICON INTERFACE [J]. ELECTRONICS LETTERS, 1972, 8 (16) : 402 - &

[62] SHRINKAGE EFFECT OF STACKING-FAULTS DURING HCL OXIDATION IN STEAM [J]. APPLIED PHYSICS LETTERS, 1976, 29 (03) : 136 - 138

[63] STACKING-FAULT GENERATION SUPPRESSION AND GROWN-IN DEFECT ELIMINATION IN DISLOCATION FREE SILICON WAFERS BY HCL OXIDATION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (01) : 1 - 10

[64] SHIRAKI M, 1975, JPN J APPL PHYS, V14, P147

[65] SHIRAKI M, 1976, JPN J APPL PHYS, V15, P83

[66] INSTABILITY PHENOMENA IN THIN INSULATING FILMS ON SILICON [J]. MICROELECTRONICS RELIABILITY, 1976, 15 (05) : 385 - 398

[67] SINGH BR, 1974, MAY EL SOC M SAN FRA

[68] POLARIZATION PHENOMENA AND OTHER PROPERTIES OF PHOSPHOSILICATE GLASS FILMS ON SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (03) : 263 - &

[69] SNOW EH, 1968, T METALL SOC AIME, V242, P512

[70] CHARACTERIZATION CONTROL AND USE OF DIELECTRIC CHARGE EFFECTS IN SILICON TECHNOLOGY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (01): : 1 - +