SILICON SELECTIVE EPITAXIAL-GROWTH AND ELECTRICAL-PROPERTIES OF EPI/SIDEWALL INTERFACES

被引：27

作者：

ISHITANI, A ^{[1
]}

KITAJIMA, H ^{[1
]}

ENDO, N ^{[1
]}

KASAI, N ^{[1
]}

机构：

[1] NEC CORP LTD,MICROELECTR RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1989年 / 28卷 / 05期

关键词：

D O I：

10.1143/JJAP.28.841

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：841 / 848

页数：8

共 16 条

[1] MODEL FOR FACET AND SIDEWALL DEFECT FORMATION DURING SELECTIVE EPITAXIAL-GROWTH OF (001) SILICON
DROWLEY, CI
REID, GA
HULL, R
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (07) : 546 - 548
[2] ENDO N, 1986, IEEE T ELECTRON DEV, V33, P1659, DOI 10.1109/T-ED.1986.22725
[3] Endo N., 1987, Proceedings of the First International Symposium on Ultra Large Integration Science and Technology: ULSI Science and Technology/1987, P64
[4] ENDO N, 1984, IEEE T ELECTRON DEV, V31, P1283, DOI 10.1109/T-ED.1984.21701
[5] SELECTIVE EPITAXIAL-GROWTH FOR THE FABRICATION OF CMOS INTEGRATED-CIRCUITS
IPRI, AC
JASTRZEBSKI, L
CORBOY, JF
METZL, R
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (12) : 1741 - 1748
[6] SELECTIVE SILICON EPITAXIAL GROWTH FOR DEVICE-ISOLATION TECHNOLOGY.
Ishitani, Akihiko
Kitajima, Hiroshi
Tanno, Kohetsu
Tsuya, Hideki
[J]. Microelectronic Engineering, 1986, 4 (01) : 3 - 33
[7] CHARGE-TRANSFER ADSORPTION IN SILICON VAPOR-PHASE EPITAXIAL-GROWTH
ISHITANI, A
TAKADA, T
OHSHITA, Y
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (02) : 390 - 394
[8] LOCAL LOADING EFFECT IN SELECTIVE SILICON EPITAXY
ISHITANI, A
ENDO, N
TSUYA, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (06): : L391 - L393
[9] FACET FORMATION IN SELECTIVE SILICON EPITAXIAL-GROWTH
ISHITANI, A
KITAJIMA, H
ENDO, N
KASAI, N
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (10): : 1267 - 1269
[10] ISHITANI A, 1987, 10TH INT C CVD HAW, P355