CHARGE-TRANSFER ADSORPTION IN SILICON VAPOR-PHASE EPITAXIAL-GROWTH

被引：22

作者：

ISHITANI, A

TAKADA, T

OHSHITA, Y

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 02期

关键词：

D O I：

10.1063/1.340250

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：390 / 394

页数：5

共 27 条

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