SELECTIVE EPITAXIAL-GROWTH FOR THE FABRICATION OF CMOS INTEGRATED-CIRCUITS

被引：12

作者：

IPRI, AC

JASTRZEBSKI, L

CORBOY, JF

METZL, R

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 12期

关键词：

D O I：

10.1109/T-ED.1984.21781

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1741 / 1748

页数：8

共 18 条

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JASTRZEBSKI, L ;

IPRI, AC ;

CORBOY, JF .

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[6] GROWTH-PROCESS OF SILICON OVER SIO2 BY CVD - EPITAXIAL LATERAL OVERGROWTH TECHNIQUE [J].

JASTRZEBSKI, L ;

CORBOY, JF ;

MCGINN, JT ;

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[7]

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[8] ORIGIN AND CONTROL OF MATERIAL DEFECTS IN SILICON VLSI TECHNOLOGIES - AN OVERVIEW [J].

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[9]

JASTRZEBSKI L, 1963, J CRYST GROWTH, V63, P493

[10]

JASTRZEBSKI L, 1982, J ELECTROCHEM SOC, V129

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