FABRICATION OF AU FINE PATTERNS BY AR SPUTTER ETCHING USING MOO3 MASK

被引:2
作者
BABA, M
OKAMOTO, M
KUMAGAI, K
IKEDA, T
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 03期
关键词
MOO3; ELECTRON RESIST; INORGANIC RESIST; BILEVEL RESIST; AU PATTERNING; SPUTTER ETCHING; ETCHING MASK;
D O I
10.1143/JJAP.31.947
中图分类号
O59 [应用物理学];
学科分类号
摘要
A new fabrication technique of fine Au patterns using a bilevel MoO3 film is proposed. In this process, the MoO3 film is used as an electron resist for patterning, followed by Au layer etching with Ar-ion sputtering, using the bilevel MoO3 layer as a mask. The upper layer of the bilevel MoO3 resist is suitable for use as a mask layer. The lower layer, which is sputter-deposited with lower rf power, is useful for easy removal of the MoO3 mask after sputter etching of the Au layer.
引用
收藏
页码:947 / 948
页数:2
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